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ZXMN10A08E6
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
Note 5)
Symbol
V DSS
V GS
Value
100
± 20
1.9
Unit
V
V
Continuous Drain current
V GS = 10V
T A =70 ° C (Note 5)
(Note 4)
I D
1.5
1.5
A
(Note 7)
3.5
Pulsed Drain current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Note 6)
(Note 5)
(Note 6)
I DM
I S
I SM
8.6
2.5
8.6
A
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
(Note 4)
Symbol
Value
1.1
Unit
Power Dissipation
(Note 5)
P D
1.7
W
(Note 7)
6.3
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 4)
(Note 5)
(Note 7)
R θ JA
R θ JL
T J , T STG
114
73.5
19.7
-55 to +150
° C/W
° C/W
° C
Notes:
4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
5. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
6. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300μs - pulse width limited by maximum junction temperature.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
Thermal Characteristics
10
1
R DS(on)
Limited
DC
1.2
1.0
0.8
1s
0.6
100m
100ms
0.4
10m
Single Pulse
T amb =25°C
10ms
1ms
100μs
0.2
100m
1
10
100
0.0
0
20
40
60
80
100 120 140 160
120
V DS Drain-Source Voltage (V)
Safe Operating Area
Temperature (°C)
Derating Curve
100
T amb =25°C
100
Single Pulse
T amb =25°C
80
60
40
D=0.5
D=0.2
Single Pulse
10
20
D=0.05
D=0.1
1
100μ
1m
10m 100m
1
10
100
1k
100μ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 8 – 2
2 of 7
www.diodes.com
March 2012
? Diodes Incorporated
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